target specification rev 1 november 2005 1/9 9 this is a preliminary information on a new product foreseen to be developed. details are subject to change without notice STGW30NC120HD n-channel 30a - 1200v - to-247 very fast powermesh? igbt general features low on-losses low on-voltage drop (v cesat ) high current capability high input impedance (voltage driven) low gate charge very high frequency operation latch current free operation description using the latest high voltage technology based on its patented strip layout, stmicroelectronics has designed an advanced family of igbts, with outstanding performances. the suffix ?h? identifies a family optimized for high frequency application in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. applications high frequency motor control u.p.s welding equipment induction heating order codes internal schematic diagram type v ces v ce(sat) (max) @ 25c i c STGW30NC120HD 1200v < 2.8v 30a 1 2 3 to-247 sales type marking package packaging STGW30NC120HD gw30nc120hd to-247 tube www.st.com 4 .com u datasheet
1 electrical ratings STGW30NC120HD 2/9 1 electrical ratings table 1. absolute maximum ratings table 2. thermal resistance symbol parameter value unit v ces collector-emitter voltage (v gs = 0) 1200 v i c note 2 collector current (continuous) at 25c 60 a i c note 2 collector current (continuous) at 100c 30 a i cm note 1 collector current (pulsed) 120 a v ge gate-emitter voltage 20 v p tot total dissipation at t c =25c 200 w i f diode rms forward current at t c =25c 200 t j operating junction temperature ? 55 to 150 c t stg storage temperature min. typ. max. unit rthj-case thermal resistance junction-case -- -- 0.625 c/w rthj-amb thermal resistance junction-ambient -- -- 50 c/w 4 .com u datasheet
STGW30NC120HD 2 electrical characteristics 3/9 2 electrical characteristics (t case = 25 c unless otherwise specified) table 3. static table 4. dynamic symbol parameter test conditions min. typ. max. unit v br(ces) collectro-emitter breakdown voltage i c = 250a, v ge = 0 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15v, i c = 20a, tj= 25c v ge = 15v, i c = 20a, tj= 125c 2.4 2 2.9 v v v ge(th) gate threshold voltage v ce = v ge , i c = 250a 57v i ces collector-emitter leakage current (v ce = 0) v ge =max rating,tc=25c v ge =max rating, tc=125c 10 100 a a i ges gate-emitter leakage current (v ce = 0) v ge = 20v , v ce = 0 100 na g fs forward transconductance v ce = 25v , i c = 25a tbd s symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25v, f = 1 mhz, v ge = 0 tbd tbd tbd pf pf pf qg qge qgc total gate charge gate-emitter charge gate-collector charge v ce =960v, i c =20a,v ge =15v tbd tbd tbd tbd nc nc nc 4 .com u datasheet
2 electrical characteristics STGW30NC120HD 4/9 table 5. switching on/off (inductive load) table 6. switching energy (inductive load) table 7. collector-emitter diode (1)pulse width limited by max junction temperature (2) calculated according to the iterative formula: (3) eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as external diode. igbts & diode are at the same temperature (25c and 125c) (4) turn-off losses include also the tail of the collector current symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960v, i c = 20a r g = 10 ? , v ge = 15v, tj= 25c (see figure 3) tbd 62 tbd ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960v, i c = 20a r g = 10 ? , v ge = 15v, tj= 125c (see figure 3) tbd tbd tbd ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 960v, i c = 20a r g = 10 ? , v ge = 15v, tj= 25c (see figure 3) tbd tbd tbd ns ns ns t r (v off ) t d ( off ) t f cross-over time off voltage rise time turn-off delay time current fall time v cc = 960v, i c = 20a r g = 10 ? , v ge = 15v, tj= 125c (see figure 3) tbd tbd tbd ns ns ns symbol parameter test conditions min. typ. max. unit eon note 3 e off note 4 e ts turn-on switching losses turn-off switching losses total switching losses v cc = 960v, i c = 20a r g =10 ? , v ge = 15v, tj= 25c (see figure 3) tbd tbd tbd j j j eon note 3 e off note 4 e ts turn-on switching losses turn-off switching losses total switching losses v cc = 960v, i c = 20a r g =10 ? , v ge = 15v, tj= 125c (see figure 3) tbd tbd tbd j j j symbol parameter test conditions min. typ. max. unit v f forward on-voltage if = 12a if = 12a, tj = 125 c 2.4 1.4 2.9 v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current if = 12a, v r = 27v, t j = 125 c, di/dt = 100a/s (see figure 4) tbd tbd tbd ns nc a i c t c () t jmax t c ? r thj c ? v cesat max () t c i c , () -------------------------------------------------------------------------------------------------- = 4 .com u datasheet
STGW30NC120HD 3 test circuits 5/9 3 test circuits figure 1. test circuit for inductive load switching figure 2. gate charge test circuit figure 3. switching waveform figure 4. diode recovery time waveform 4 .com u datasheet
4 package mechanical data STGW30NC120HD 6/9 4 package mechanical data in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect . the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com 4 .com u datasheet
STGW30NC120HD 4 package mechanical data 7/9 dim. mm. inch min. typ max. min. typ. max. a 4.85 5.15 0.19 0.20 a1 2.20 2.60 0.086 0.102 b 1.0 1.40 0.039 0.055 b1 2.0 2.40 0.079 0.094 b2 3.0 3.40 0.118 0.134 c 0.40 0.80 0.015 0.03 d 19.85 20.15 0.781 0.793 e 15.45 15.75 0.608 0.620 e5.45 0.214 l 14.20 14.80 0.560 0.582 l1 3.70 4.30 0.14 0.17 l2 18.50 0.728 ?p 3.55 3.65 0.140 0.143 ?r 4.50 5.50 0.177 0.216 s5.50 0.216 to-247 mechanical data 4 .com u datasheet
5 revision history STGW30NC120HD 8/9 5 revision history date revision changes 14-nov-2005 1 initial release. 4 .com u datasheet
STGW30NC120HD 5 revision history 9/9 i nformation furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the con sequence s o f use of such information nor for any infringement of patents or other rights of third parties which may result from its use. n o license is grante d b y implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicatio n are subje ct t o change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics produ cts are n ot a uthorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com 4 .com u datasheet
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